Infineon IRLR8256TRPBF
Single N-Channel 25 V 5.7 mOhm 15 nC HEXFET® Power Mosfet - TO-252-3
Obsolete
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Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR8256TRPBF.
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-19
Lifecycle StatusObsolete (Last Updated: 7 months ago)
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Descriptions
Descriptions of Infineon IRLR8256TRPBF provided by its distributors.
Single N-Channel 25 V 5.7 mOhm 15 nC HEXFET® Power Mosfet - TO-252-3
MOSFET N-CH 25V 81A DPAK / Trans MOSFET N-CH 25V 81A 3-Pin(2+Tab) DPAK T/R
MOSFET, 25V, 81A, 5.7MOHM, 10 NC QG, LOGIC LEVEL, D-PAK
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Mosfet, N-Ch, 25V, 81A, To-252Aa; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0042Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes |Infineon Technologies IRLR8256TRPBF
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
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CAD Models
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Alternate Parts
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Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)81 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time8.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation63 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance5.7 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation63 W
Rds On Max5.7 mΩ
Rise Time46 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time9.7 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR8256TRPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements