Infineon IRLR8259TRPBF

Name: Infineon IRLR8259TRPBF
Brand: Infineon
SKU: IRLR8259TRPBF

IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3

$ 1.88

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRLR8259TRPBF	0	20	Bulk			1.970	1.880	1.880	7h
Farnell	2	IRLR8259TRPBF	0	1	Cut Tape	1.255*	1.255*	1.255*	1.255*	1.255*	5h
Microchip USA		IRLR8259TRPBF	2,051	3K	Tray					0.928	7d
Weyland Electronics Group Pte. Ltd.		IRLR8259TRPBF	800	1	Tape & Reel	3.830	3.830	3.830	3.830	3.830	11h
Win Source		WS-IRLR8259TRPBF	16,280	28				1.647	1.412	1.412	6h

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8259TRPBF.

IHS

Datasheet11 pages17 years ago

Datasheet0 pages0 years ago

iiiC

Inventory History

3 month trend:

-100%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR8259TRPBF

InfineonIRLR8259PBF

Price @ 1000

$ 1.88

$ 0.337

Stock

482,911

408,034

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

25 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

1.9 V

Rds On Max

8.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

48 W

Input Capacitance

900 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-12-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon IRLR8259TRPBF provided by its distributors.

IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3

Future Electronics

Trans MOSFET N-CH 25V 57A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 25V 57A DPAK

Win Source

25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N-CH, 25V, 57A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; P

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon