Infineon IRLR8259PBF

Name: Infineon IRLR8259PBF
Brand: Infineon
SKU: IRLR8259PBF

25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

$ 0.337

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRLR8259PBF	75					0.407	0.337	0.301	1d
RS (Formerly Allied Electronics)	IRLR8259PBF	0	1200	Bulk					0.988	6h
Farnell	IRLR8259PBF	0	1		0.892*	0.892*	0.598*	0.427*	0.427*	5h
Win Source	WS-IRLR8259PBF	16,720	28				1.647	1.412	1.412	5h
Worldway Electronics	IRLR8259PBF	10,751	7	Tube		0.111	0.108	0.102	0.102	4h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8259PBF.

IHS

Datasheet11 pages17 years ago

Datasheet0 pages0 years ago

iiiC

Inventory History

3 month trend:

+0.00%

Alternate Parts

This Part

Alternate Parts

InfineonIRLR8259PBF

InfineonIRLR8259TRPBF

Price @ 1000

$ 0.337

$ 1.88

Stock

408,034

482,911

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

25 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

1.9 V

Rds On Max

8.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

48 W

Input Capacitance

900 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRLR8259PBF provided by its distributors.

25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N-CH 25V 57A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:25V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Package / Case:D-PAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

element14 APAC