Infineon IRLR3105PBF

Name: Infineon IRLR3105PBF
Brand: Infineon
SKU: IRLR3105PBF

IRLR3105PBF N-channel MOSFET Transistor, 25 A, 55 V, 3-Pin DPAK

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR3105PBF	0	1125	Bulk					0.540	2h
Farnell	IRLR3105PBF	0	1		0.414*	0.406*	0.398*	0.372*	0.364*	10h
Win Source	WS-IRLR3105PBF	13,320	55				0.919	0.613	0.613	12h
Worldway Electronics	IRLR3105PBF	14,771	7	Tube		0.229	0.222	0.211	0.211	1d
Anlinkda	IRLR3105PBF	91,901			0.081	0.072	0.062	0.062	0.052	2d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR3105PBF.

IHS

Datasheet12 pages15 years ago

Datasheet11 pages15 years ago

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Newark

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR3105PBF

InfineonIRLR3105TRPBF

Price @ 1000

$ 0.55

Stock

138,674

1,321,141

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

25 A

Threshold Voltage

3 V

Rds On Max

37 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

57 W

Input Capacitance

710 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-08-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRLR3105PBF provided by its distributors.

IRLR3105PBF N-channel MOSFET Transistor, 25 A, 55 V, 3-Pin DPAK

RS (Formerly Allied Electronics)

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 55V, 25A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:55V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:25A; Junction to Case Thermal Resistance A:2.65°C/W; On State resistance @ Vgs = 10V:37mohm; Package / Case:DPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

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