Infineon IRLR2908TRPBF

Name: Infineon IRLR2908TRPBF
Brand: Infineon
SKU: IRLR2908TRPBF

MOSFET, Power; N-Ch; VDSS 80V; RDS(ON) 22.5 Milliohms; ID 39A; D-Pak (TO-252AA); -55de

$ 0.828

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	IRLR2908TRPBF	202,000	2K						0.397	1d
Newark	2	IRLR2908TRPBF	748	1	Cut Tape	2.160	1.440	1.020	0.934	0.934
Future Electronics	2	IRLR2908TRPBF	30,000	2K	Tape & Reel					0.485
Rutronik		TMOSP12624	2,000	2K						0.411	18h
Arrow Electronics	2	IRLR2908TRPBF	3,459	4			1.347	0.901	0.653	0.558

Inventory History

3 month trend: -4.25%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR2908TRPBF.

IHS

Datasheet11 pages15 years ago

Datasheet12 pages15 years ago

iiiC

RS (Formerly Allied Electronics)

Newark

Inventory History

3 month trend:

-4.25%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLR2908TRPBF

InfineonAUIRLR2908

Price @ 1000

$ 0.828

$ 2.05

Stock

1,047,957

94,435

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

80 V

Continuous Drain Current (ID)

30 A

Threshold Voltage

2.5 V

Rds On Max

28 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

120 W

Input Capacitance

1.89 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-02-13

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRLR2908TRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 22.5 Milliohms;ID 39A;D-Pak (TO-252AA);-55de

RS (Formerly Allied Electronics)

Trans MOSFET N-CH Si 80V 39A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 80V 30A DPAK

Win Source

Single N-Channel 80 V 30 mOhm 33 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 80 V, 30 A, 0.0225 ohm, TO-252AA, Surface Mount

Avnet

Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2000; Transistor Type:MOSFET ;RoHS Compliant: Yes

Newark

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N CH, 80V, 30A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0225ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V;

element14 APAC