Infineon IRLR2908PBF

Name: Infineon IRLR2908PBF
Brand: Infineon
SKU: IRLR2908PBF

MOSFET, Power; N-Ch; VDSS 80V; RDS(ON) 22.5 Milliohms; ID 39A; D-Pak (TO-252AA); -55de

$ 1.6

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR2908PBF	0	5	Bulk		1.780	1.600	1.600	1.600	10h
Win Source	WS-IRLR2908PBF	18,130	60				0.876	0.584	0.584	21h
Worldway Electronics	IRLR2908PBF	11,176	7	Tube		1.696	1.664	1.600	1.568	20h
Aztech	IRLR2908PBF	7,055			0.360	0.360	0.360	0.360	0.360	16h
Anlinkda	IRLR2908PBF	43,493			0.210	0.188	0.172	0.166	0.163	20h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR2908PBF.

Newark

Datasheet11 pages15 years ago

Datasheet12 pages21 years ago

IHS

DigiKey

iiiC

RS (Formerly Allied Electronics)

CAD Models

Download Infineon IRLR2908PBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-02-13

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

Related Parts

InfineonIRLR2908TRPBF

MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 22.5 Milliohms;ID 39A;D-Pak (TO-252AA);-55de

Details

InfineonIRLR2908TRLPBF

Single N-Channel 80 V 28 mOhm 22 nC HEXFET® Power Mosfet - TO-252-3

Details

InfineonAUIRLR2908

Automotive Q101 80V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Details

onsemiFDD5680

N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3

Details

VishaySQD25N06-22L_GE3

MOSFET N-CH 60V 25A TO252 / Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK T/R

Details

STMicroelectronicsSTD30N10F7

N-channel 100 V, 0.02 Ohm typ., 35 A STripFET F7 Power MOSFET in a DPAK package

Details

Descriptions

Descriptions of Infineon IRLR2908PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 22.5 Milliohms;ID 39A;D-Pak (TO-252AA);-55de

RS (Formerly Allied Electronics)

Single N-Channel 80 V 28 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 80V, 39A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:80V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:120W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.3°C/W; On State resistance @ Vgs = 10V:28mohm; Package / Case:DPAK; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:150A; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC