Infineon IRLR120NTRLPBF
$ 0.5
Obsolete
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Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR120NTRLPBF.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
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Descriptions
Descriptions of Infineon IRLR120NTRLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
MOSFET N-CH 100V 10A DPAK N-Channel 100 V 10A (Tc) 48W (Tc) Surface Mount TO-252AA (DPAK)
Single N-Channel 100 V 185 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
IRLR120NTRLPBF,MOSFET, 100V, 1 1A, 185 MOHM, 13.3 NC QG, LOG
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
48W(Tc) 16V 2V@ 250µA 20nC@ 5 V 1individualNChannel 100V 185mΩ@ 6A,10V 10A 440pF@25V DPAK，TO-252AA SMD mount 6.5mm*6.22mm*2.3mm
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:48W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRLR120NTRLPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating11 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance225 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance440 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance185 mΩ
Package Quantity3000
Power Dissipation39 W
Rds On Max185 mΩ
Resistance185 MΩ
Rise Time35 ns
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time4 ns
Voltage Rating (DC)100 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR120NTRLPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements