Infineon IRLR120NTRLPBF

Name: Infineon IRLR120NTRLPBF
Brand: Infineon
SKU: IRLR120NTRLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.185 Ohm; Id 10A; D-pak (TO-252AA); Pd 48W

$ 0.462

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRLR120NTRLPBF	6,000	3K						0.326
Rochester Electronics		IRLR120NTRLPBF	12,412					0.557	0.462	0.412	4h
RS (Formerly Allied Electronics)		IRLR120NTRLPBF	0	3K	Bulk					3.180	18h
Farnell	3	IRLR120NTRLPBF	3	1	Cut Tape	1.254*	1.254*	1.254*	1.254*	1.254*	4h
Verical	4	IRLR120NTRLPBF	6,000	3K						0.325

Inventory History

3 month trend: +95.59%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR120NTRLPBF.

IHS

Datasheet12 pages11 years ago

Newark

RS (Formerly Allied Electronics)

Jameco

DigiKey

Inventory History

3 month trend:

+95.59%

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon IRLR120NTRLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W

RS (Formerly Allied Electronics)

Single N-Channel 100 V 185 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

IRLR120NTRLPBF,MOSFET, 100V, 1 1A, 185 MOHM, 13.3 NC QG, LOG

Jameco

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:48W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRLR120NTRLPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48

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