Infineon IRFR120NPBF

Name: Infineon IRFR120NPBF
Brand: Infineon
SKU: IRFR120NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.21 Ohm; Id 9.4A; D-pak (TO-252AA); Pd 48W

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Farnell	IRFR120NPBF	0	1		0.447*	0.354*	0.306*	0.210*	0.210*	4h
Win Source	WS-IRFR120NPBF	95,260	280					0.162	0.140	5h
Worldway Electronics	IRFR120NPBF	11,732	7	Tube		0.048	0.046	0.044	0.044	4h
GreenTree Electronics	IRFR120NPBF	100								1d
Fly-Wing Technology	IRFR120NPBF	382,725			0.269	0.220	0.214	0.200	0.200	2h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR120NPBF.

Newark

Datasheet11 pages21 years ago

Datasheet11 pages28 years ago

Datasheet10 pages28 years ago

IHS

RS (Formerly Allied Electronics)

Jameco

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

InfineonIRFR120NTRPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W

Details

InfineonIRFR120ZPBF

Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA

Details

InfineonIRFR120NTRLPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W

Details

onsemiHUFA76609D3S

TRANS MOSFET N-CH 100V 10A 3PIN TO-252AA

Details

onsemiHUF76609D3ST

N-Channel Logic Level UltraFET Power MOSFET 100V, 10A, 165mΩ

Details

onsemiHUF76609D3S

10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 10A DPAK

Details

Descriptions

Descriptions of Infineon IRFR120NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W

RS (Formerly Allied Electronics)

Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

MOSFET Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):210mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, 100V, 9.1A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:39W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:9.4A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:38A; SMD Marking:IRFR120N; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC