Infineon IRL3705NSPBF
$ 2.15
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-08-16
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
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Descriptions
Descriptions of Infineon IRL3705NSPBF provided by its distributors.
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK
MOSFET, 55V, 89A, 10 MOHM, 65.3 NC QG, LOGIC LEVEL, D2-PAK
MOSFET, N, 55V, 89A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:89A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:D2-PAK; ;RoHS Compliant: Yes
MOSFET, N, 55V, 89A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:340mJ; Capacitance Ciss Typ:3600pF; Current Iar:46A; Current Id Max:89A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:78ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.9°C/W; N-channel Gate Charge:98nC; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:310A; Rise Time:140ns
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)89 A
Current Rating89 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance10 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max10 mΩ
Recovery Time140 ns
Resistance10 mΩ
Rise Time140 ns
Threshold Voltage2 V
Turn-Off Delay Time37 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width10.16 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements