Descriptions of Infineon IRL2910STRLPBF provided by its distributors.
Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 55A 3-Pin (2+Tab) D2PAK T/R
Infineon N-Ch HEXFET MOSFET, Vds=100V 55A D2PAK (TO-263) SMD 3-Pin
MOSFET, 100V, 55A, 26 MOHM, 93.3 NC QG,LOGIC LEVEL, D2-PAK
HEXFET Power MOSFET Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 100V, 55A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Po
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:55A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D2-Pak; Power Dissipation, Pd:200W ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 55 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 26 / Gate-Source Voltage V = 16 / Fall Time ns = 55 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200