Infineon IRG4BC30FPBF

Name: Infineon IRG4BC30FPBF
Brand: Infineon
SKU: IRG4BC30FPBF

IRG4BC30FPbF Series 600 V 17 A N-Channel Fast Speed IGBT - TO-220AB

$ 3.43

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC30FPBF	0	1	Bulk	5.860	5.160	4.500	3.430	3.430	4h
Farnell		IRG4BC30FPBF	0	1		0.996*	0.984*	0.972*	0.960*	0.960*	11h
Microchip USA	2	IRG4BC30F	247	600	Tray				1.033	1.033	3d
Win Source	2	WS-IRG4BC30FPBF	20	50				1.277	0.852	0.852	13h
Worldway Electronics	2	IRG4BC30FPBF	13,443	7	Tube		0.322	0.312	0.295	0.295	1d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC30FPBF.

IHS

Datasheet8 pages16 years ago

Datasheet9 pages25 years ago

Factory Futures

Newark

iiiC

RS (Formerly Allied Electronics)

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRG4BC30FPBF provided by its distributors.

IRG4BC30FPbF Series 600 V 17 A N-Channel Fast Speed IGBT - TO-220AB

Future Electronics

600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB

Avnet

FAST SPEED INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Fall Time Max:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

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