Infineon IRFZ44EPBF

Name: Infineon IRFZ44EPBF
Brand: Infineon
SKU: IRFZ44EPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 0.023 Ohm; Id 48A; TO-220AB; Pd 110W; Vgs +/-20V

$ 2.27

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFZ44EPBF	0	1	Bulk	2.530	2.270	2.270	2.270	2.270	1d
Farnell		IRFZ44EPBF	0	1		0.451*	0.447*	0.442*	0.442*	0.442*	12h
Microchip USA		IRFZ44E	397	3K	Tube					0.977	4d
Win Source	2	WS-IRFZ44E	1,000	9			5.821	3.881	3.881	3.881	13h
Worldway Electronics	2	IRFZ44EPBF	10,286	7	Tube		1.435	1.391	1.318	1.318	12h

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFZ44EPBF.

Newark

Datasheet9 pages22 years ago

Datasheet10 pages22 years ago

IHS

RS (Formerly Allied Electronics)

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon IRFZ44EPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-220AB;PD 110W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 60 V 0.023 Ohm 60 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N Channel Mosfet, 60V, 48A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:48A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ44EPBF.

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 48 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 70 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 70 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

Distrelec

MOSFET, N, 60V, 48A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:192A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC