Infineon IRFU4510PBF

Single N-Channel 100 V 13.9 mOhm 81 nC HEXFET® Power Mosfet - IPAK

MOSFET N CH 100V 56A IPAK / Trans MOSFET N-CH Si 100V 63A 3-Pin(3+Tab) IPAK Tube

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

MOSFET N CH 100V, 56A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:143W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 63 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 11.1 / Gate-Source Voltage V = 20 / Fall Time ns = 34 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 143