Infineon IRFU2607ZPBF

Name: Infineon IRFU2607ZPBF
Brand: Infineon
SKU: IRFU2607ZPBF

MOSFET, N Ch., Automotive, 75V, 45A, 22 MOHM, 34 NC QG, I-PAK, Pb-Free

$ 3.12

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFU2607ZPBF	0	600	Bulk				3.120	2.850	1d
Farnell	IRFU2607ZPBF	0	1		1.237*	1.237*	0.914*	0.744*	0.744*	7h
Win Source	WS-IRFU2607ZPBF	20	6			8.738	5.826	5.826	5.826	9h
Worldway Electronics	IRFU2607ZPBF	16,425	7	Tube		0.832	0.806	0.764	0.764	7h
Fly-Wing Technology	IRFU2607ZPBF	2,350			7.036	5.773	5.593	5.232	5.232	2d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFU2607ZPBF.

IHS

Datasheet12 pages15 years ago

Datasheet11 pages15 years ago

element14 APAC

Newark

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-10-25

LTD Date2015-04-25

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Descriptions

Descriptions of Infineon IRFU2607ZPBF provided by its distributors.

MOSFET, N Ch., Automotive, 75V, 45A, 22 MOHM, 34 NC QG, I-PAK, Pb-Free

RS (Formerly Allied Electronics)

MOSFET N-CH 75V 42A I-PAK / Trans MOSFET N-CH Si 75V 45A 3-Pin(3+Tab) IPAK

Win Source

Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IHS

MOSFET, N-CH, 75V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:75V; On Resistance Rds(on):17.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:1440pF; Current Id Max:42A; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:180A; Reverse Recovery Time trr Typ:30ns; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC