Infineon IRFU1205PBF
$ 2.14
Obsolete
Price and Stock
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SKU
Min
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Bulk Pricing
Inventory History
No data available
CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 weeks ago)
LTB Date2008-03-13
LTD Date2008-09-13
Related Parts
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Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonAUIRLU2905
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, IPAK-3, RoHS
Descriptions
Descriptions of Infineon IRFU1205PBF provided by its distributors.
Single N-Channel 55 V 0.027 Ohm 65 nC HEXFET® Power Mosfet - IPAK
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):27mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
MOSFET, N, 55V, 37A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:37A; Resistance, Rds On:0.027ohm; Case Style:TO-251 (I-Pak); Case Style, Alternate:I-PAK; Current, Idm Pulse:160A; Power Dissipation:69W; Power, Pd:69W; Resistance, Rds on @ Vgs = 10V:27ohm; Thermal Resistance, Junction to Case A:1.8°C/W; Time, t Off:60ns; Time, t On:69ns; Voltage, Vds Max:55V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-251
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating37 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation69 W
Rds On Max27 mΩ
Resistance27 mΩ
Rise Time69 ns
Turn-Off Delay Time47 ns
Turn-On Delay Time7.3 ns
Voltage Rating (DC)55 V
Dimensions
Height9.75 mm
Length6.7056 mm
Width2.3876 mm
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements