Infineon IRFS4620PBF

Name: Infineon IRFS4620PBF
Brand: Infineon
SKU: IRFS4620PBF

Single N-Channel 200 V 77.5 mOhm 25 nC HEXFET® Power Mosfet - D2PAK

$ 2.55

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFS4620PBF	0	5	Bulk		2.890	2.550	2.550	2.550	6h
Farnell	IRFS4620PBF	0	1		2.371*	1.809*	1.434*	1.033*	1.013*	4h
Win Source	WS-IRFS4620PBF	1,008	135					0.278	0.250	5h
Worldway Electronics	IRFS4620PBF	16,986	7	Tube		0.087	0.084	0.080	0.080	4h
SHENGYU ELECTRONICS	IRFS4620PBF	10,097	1		0.674	0.660	0.640	0.620	0.590	2d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS4620PBF.

IHS

Datasheet10 pages17 years ago

Datasheet11 pages17 years ago

Farnell

iiiC

Alternate Parts

This Part

Alternate Parts

InfineonIRFS4620PBF

InfineonIRFS4620TRLPBF

Price @ 1000

$ 2.55

$ 0.72

Stock

212,116

431,135

Authorized Distributors

Mount

Surface Mount

Surface Mount, Through Hole

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

24 A

Threshold Voltage

5 V

Rds On Max

77.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

144 W

Input Capacitance

1.71 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFS4620PBF provided by its distributors.

Single N-Channel 200 V 77.5 mOhm 25 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

MOSFET, 200V, 24A, 78 mOhm, 25 nC Qg, D2PAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK

Avnet

Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH 200V 24A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:200V; On Resistance Rds(on):77.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:D2-PAK; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC