onsemi FQB34N20LTM

Name: onsemi FQB34N20LTM
Brand: onsemi
SKU: FQB34N20LTM

N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK

$ 1.672

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Distributor		SKU		Min	Pkg
Avnet		FQB34N20LTM	800	800					1.619	1.518	4d
Verical		FQB34N20LTM	2,400	800					2.282	2.282
Arrow Electronics		FQB34N20LTM	2,400	800					1.740	1.677
DigiKey	3	FQB34N20LTMCT-ND	4,020	1	Cut Tape	4.870	3.217	2.279	2.279	2.279
Newark	2	FQB34N20LTM	0	800	Cut Tape				2.770	2.770

Inventory History

3 month trend: -8.69%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQB34N20LTM.

Farnell

Datasheet0 pages0 years ago

Datasheet9 pages25 years ago

Datasheet8 pages17 years ago

Upverter

IHS

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

-8.69%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-09-13

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQB34N20LTM provided by its distributors.

N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK

onsemi

FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3

Future Electronics

Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N, SMD, TO-263; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:31A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:D2-PAK; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; No. of Pins:2; Power Dissipation:180W; Power Dissipation on 1 Sq. PCB:3.13W; Voltage, Vds Max:200V; Voltage, Vgs th Max:2V

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor