Infineon IRFS4115TRLPBF

Name: Infineon IRFS4115TRLPBF
Brand: Infineon
SKU: IRFS4115TRLPBF

Single N-Channel 150V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

$ 1.35

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	IRFS4115TRLPBF	38	1	Cut Tape	4.390	3.070	2.570	2.570	2.570
Future Electronics	3	IRFS4115TRLPBF	95,200	800	Tape & Reel				1.250	1.220
Arrow Electronics	2	IRFS4115TRLPBF	760	1		3.607	2.444	1.599	1.599	1.599
Rutronik		TMOSP12816	14,400	800					1.550	1.230	17h
Rochester Electronics		IRFS4115TRLPBF	104,390					1.610	1.340	1.190	9h

Inventory History

3 month trend: +1.70%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS4115TRLPBF.

IHS

Datasheet9 pages15 years ago

Newark

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+1.70%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS4115TRLPBF

InfineonIRFS4115PBF

Price @ 1000

$ 1.35

$ 1.34

Stock

578,281

220,248

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

99 A

Threshold Voltage

5 V

Rds On Max

12.1 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

375 W

Input Capacitance

5.27 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-11-11

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFS4115TRLPBF provided by its distributors.

Single N-Channel 150V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 195A 3-Pin(2+Tab) D2PAK T/R

Verical

Power MOSFET, N Channel, 150 V, 195 A, 0.0121 ohm, TO-263AB, Surface Mount

Avnet

HEXFET Power MOSFET Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N-CH, 150V, 195A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 99 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 10.3 / Gate-Source Voltage V = 20 / Fall Time ns = 39 / Rise Time ns = 73 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 73 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375

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