Infineon IRFS4115PBF

Name: Infineon IRFS4115PBF
Brand: Infineon
SKU: IRFS4115PBF

Single N-Channel 150 V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

$ 1.34

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFS4115PBF	50					1.500	1.340	1.260	22h
RS (Formerly Allied Electronics)	IRFS4115PBF	0	2	Bulk		6.590	6.300	6.300	6.300	13h
Farnell	IRFS4115PBF	0	1		4.446*	3.375*	3.067*	2.303*	2.303*	17h
Win Source	WS-IRFS4115PBF	20	35				1.265	1.028	1.028	23h
Worldway Electronics	IRFS4115PBF	12,703	7	Tube		0.454	0.440	0.417	0.417	22h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS4115PBF.

IHS

Datasheet9 pages15 years ago

Datasheet10 pages15 years ago

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iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS4115PBF

InfineonIRFS4115TRLPBF

Price @ 1000

$ 1.34

$ 1.35

Stock

220,248

576,701

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

99 A

Threshold Voltage

5 V

Rds On Max

12.1 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

375 W

Input Capacitance

5.27 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-11-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFS4115PBF provided by its distributors.

Single N-Channel 150 V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 195A 3-Pin(2+Tab) D2PAK Tube

Avnet

HEXFET Power MOSFET Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N-CH 150V 99A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:99A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

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