Infineon IRFR7446PBF

Name: Infineon IRFR7446PBF
Brand: Infineon
SKU: IRFR7446PBF

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Farnell	IRFR7446PBF	0	1		1.359*	1.359*	0.918*	0.565*	0.565*	17h
Win Source	WS-IRFR7446PBF	20,000	90				0.672	0.448	0.448	17h
Worldway Electronics	IRFR7446PBF	19,226	7	Tube		0.347	0.340	0.327	0.321	17h
SHENGYU ELECTRONICS	IRFR7446PBF	8,727	1		0.314	0.308	0.300	0.290	0.280	12h
Fly-Wing Technology	IRFR7446PBF	2,285			0.553	0.454	0.440	0.411	0.411	1d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR7446PBF.

IHS

Datasheet12 pages11 years ago

Datasheet11 pages11 years ago

Newark

Alternate Parts

This Part

Alternate Parts

InfineonIRFR7446PBF

InfineonIRFR7446TRPBF

Price @ 1000

$ 0.46

Stock

50,463

1,010,295

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

TO-252-3

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

3 V

Rds On Max

3.9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

98 W

Input Capacitance

3.15 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-03-28

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRFR7446PBF provided by its distributors.

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N-CH, 40V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po

Farnell

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon