Infineon IPD50N04S4L08ATMA1

Name: Infineon IPD50N04S4L08ATMA1
Brand: Infineon
SKU: IPD50N04S4L08ATMA1

Power MOSFET, N Channel, 40 V, 50 A, 0.0062 ohm, TO-252 (DPAK), Surface Mount

$ 0.38

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Distributor		SKU		Min	Pkg
Newark	2	IPD50N04S4L08ATMA1	22,253	5	Cut Tape		0.865	0.865	0.865	0.865
Rutronik		TMOSP10371	10,000	2500						0.254	3h
Rochester Electronics		IPD50N04S4L08ATMA1	58,306					0.358	0.297	0.265	20h
Arrow Electronics		IPD50N04S4L08ATMA1	1,700	1		0.975	0.700	0.478	0.344	0.344
DigiKey	3	IPD50N04S4L08ATMA1CT-ND	12,756	1	Cut Tape	1.520	0.954	0.628	0.443	0.443

Inventory History

3 month trend: -0.43%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD50N04S4L08ATMA1.

IHS

Datasheet9 pages4 years ago

Datasheet9 pages16 years ago

Inventory History

3 month trend:

-0.43%

CAD Models

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-04-06

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPD50N04S4L08ATMA1 provided by its distributors.

Power MOSFET, N Channel, 40 V, 50 A, 0.0062 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

40V, N-Ch, 7.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

Infineon SCT

Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 50A I(D), 40V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

Mosfet, Aec-Q101, N-Ch, 40V, To-252; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon Technologies IPD50N04S4L08ATMA1

Newark

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications

Infineon