Infineon IRFR120NTRLPBF

Name: Infineon IRFR120NTRLPBF
Brand: Infineon
SKU: IRFR120NTRLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.21 Ohm; Id 9.4A; D-pak (TO-252AA); Pd 48W

$ 1.011

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFR120NTRLPBF	2,710	1		1.073	1.055	0.771	0.582	0.582
Rochester Electronics	2	IRFR120NTRLPBF	32,285					0.440	0.365	0.326	5h
RS (Formerly Allied Electronics)		IRFR120NTRLPBF	0	20	Bulk			1.520	1.440	1.440	18h
Farnell	3	IRFR120NTRLPBF	87	5	Cut Tape		1.885*	1.845*	1.845*	1.845*	4h
Mouser		942-IRFR120NTRLPBF	3,362	1	Tape & Reel	1.650	1.650	1.470	1.470	0.518

Inventory History

3 month trend: -7.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR120NTRLPBF.

IHS

Datasheet11 pages21 years ago

Newark

DigiKey

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

-7.28%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-12-31

LTD Date2024-06-30

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Descriptions

Descriptions of Infineon IRFR120NTRLPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W

RS (Formerly Allied Electronics)

Single N-Channel 100V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):210mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48

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