Infineon IRFR1010ZPBF

Name: Infineon IRFR1010ZPBF
Brand: Infineon
SKU: IRFR1010ZPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 5.8Milliohms; ID 42A; D-Pak (TO-252AA); -55deg

$ 0.526

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFR1010ZPBF	75					0.634	0.526	0.469	20h
RS (Formerly Allied Electronics)	IRFR1010ZPBF	0	600	Bulk				2.510	2.230	9h
Farnell	IRFR1010ZPBF	0	1		2.325*	1.855*	1.438*	0.884*	0.867*	20h
Win Source	WS-IRFR1010ZPBF	7,400	65				0.895	0.693	0.693	21h
Worldway Electronics	IRFR1010ZPBF	14,731	7	Tube		0.174	0.169	0.160	0.160	19h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR1010ZPBF.

Newark

Datasheet11 pages15 years ago

IHS

Future Electronics

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+0.00%

Alternate Parts

This Part

Alternate Parts

InfineonIRFR1010ZPBF

InfineonIRFR1010ZTRPBF

Price @ 1000

$ 0.526

$ 0.749

Stock

204,553

823,703

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

4 V

Rds On Max

7.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

2.84 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFR1010ZPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg

RS (Formerly Allied Electronics)

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

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Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - DPAK

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55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

Newark

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:360A; SMD Marking:IRFR1010ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

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