Infineon IRFR4104PBF

Name: Infineon IRFR4104PBF
Brand: Infineon
SKU: IRFR4104PBF

MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 4.3Milliohms; ID 42A; D-Pak (TO-252AA); -55deg

$ 1.99

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR4104PBF	0	5	Bulk		2.260	1.990	1.990	1.990	5h
Farnell	IRFR4104PBF	0	5			0.833*	0.611*	0.571*	0.571*	16h
Win Source	WS-IRFR4104PBF	168,812	75				0.727	0.563	0.563	17h
Worldway Electronics	IRFR4104PBF	14,995	7	Tube		0.189	0.183	0.174	0.174	16h
Fly-Wing Technology	IRFR4104PBF	167,650			0.658	0.541	0.523	0.489	0.489	15h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR4104PBF.

IHS

Datasheet12 pages15 years ago

Datasheet11 pages15 years ago

Newark

iiiC

RS (Formerly Allied Electronics)

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR4104PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 42A;D-Pak (TO-252AA);-55deg

RS (Formerly Allied Electronics)

Single N-Channel 40 V 5.5 mOhm 59 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):5.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:480A; SMD Marking:IRFR4104PBF; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

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