Infineon IRFP4768PBF

Name: Infineon IRFP4768PBF
Brand: Infineon
SKU: IRFP4768PBF

Single N-Channel 250 V 17.5 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC

$ 3.095

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFP4768PBF	2,300	1		5.114	5.063	4.085	3.784	3.784
Rochester Electronics	2	IRFP4768PBF	20					2.120	1.900	1.780	1d
RS (Formerly Allied Electronics)		IRFP4768PBF	0	25	Bulk			7.030	6.330	6.330	7h
Future Electronics	2	IRFP4768PBF	0	10	Tube		3.770	3.720	3.620	3.520
Avnet	2	IRFP4768PBF	0	400					2.208	2.174	5d

Inventory History

3 month trend: -3.53%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4768PBF.

IHS

Datasheet9 pages9 years ago

Datasheet8 pages17 years ago

iiiC

Inventory History

3 month trend:

-3.53%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-02-26

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2026-05-31

LTD Date2026-11-30

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Descriptions

Descriptions of Infineon IRFP4768PBF provided by its distributors.

Single N-Channel 250 V 17.5 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

ComSIT Distribution GmbH

MOSFET, N-CH 250V 93A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:250V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Power Dissipation Pd:520W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon