Infineon IRFP4668PBF

Name: Infineon IRFP4668PBF
Brand: Infineon
SKU: IRFP4668PBF

IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC

$ 2.505

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Distributor		SKU		Min	Pkg
Future Electronics	2	IRFP4668PBF	3	10	Tube		2.820	2.770	2.700	2.630
Arrow Electronics	2	IRFP4668PBF	1,099	1		3.924	3.924	3.924	3.924	3.924
Rutronik		TMOSP12230	3,650	25				2.500	2.110	2.110	18h
Rochester Electronics		IRFP4668PBF	94					2.050	1.840	1.730	1d
RS (Formerly Allied Electronics)		IRFP4668PBF	0	1	Bulk	3.070	2.700	2.700	2.700	2.700	2h

Inventory History

3 month trend: -16.20%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4668PBF.

Newark

Datasheet8 pages17 years ago

IHS

iiiC

Inventory History

3 month trend:

-16.20%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-09-08

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRFP4668PBF provided by its distributors.

IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC

RS (Formerly Allied Electronics)

Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole

Avnet

N CHANNEL MOSFET, 200V, 130A, TO-247AC;; N CHANNEL MOSFET, 200V, 130A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:200V; On Re; Available until stocks are exhausted

element14 APAC

N Channel Mosfet, 200V, 130A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:30V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFP4668PBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, 200V 130A TO-247AC; Transistor Type:Power MOSFET; Transistor Polarity:N; Typ Voltage Vds:200V; Cont Current Id:130A; On State Resistance:8mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:5V; Case Style:TO-247AC; Termination Type:Through Hole; Operating Temperature Range:-55°C to + 175°C; Max Voltage Vds:200V; Power Dissipation:520W; Pulse Current Idm:520A; Transistor Case Style:TO-247AC

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 30 / Fall Time ns = 74 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 64 / Turn-ON Delay Time ns = 41 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 520

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