Infineon IRFP4868PBF

Name: Infineon IRFP4868PBF
Brand: Infineon
SKU: IRFP4868PBF

Trans MOSFET N-CH 300V 70A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 300V 70A TO-247AC

$ 2.39

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU	Min	Pkg
Future Electronics	2	IRFP4868PBF	10	Tube		2.520	2.480	2.410	2.350
Avnet		IRFP4868PBF	400					2.156	2.069	23h
RS (Formerly Allied Electronics)		IRFP4868PBF	1	Bulk	3.660	3.220	3.220	3.220	3.220	10h
Arrow Electronics		IRFP4868PBF	400					2.155	2.155
Farnell		IRFP4868PBF	1		6.667*	6.371*	3.239*	2.661*	2.661*	20h

Inventory History

3 month trend: +430%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4868PBF.

IHS

Datasheet9 pages8 years ago

Newark

Inventory History

3 month trend:

+430%

CAD Models

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Supply Chain

Country of OriginMainland China, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-10-30

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2026-05-31

LTD Date2026-11-30

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Descriptions

Descriptions of Infineon IRFP4868PBF provided by its distributors.

Trans MOSFET N-CH 300V 70A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 300V 70A TO-247AC

Win Source

Single N-Channel 300 V 32 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

300V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 300 V, 70 A, 0.0255 ohm, TO-247AC, Through Hole

Avnet

MOSFET N-CH 300V 70A TO-247AC-TRANSISTOR

Component Sense

Power Field-Effect Transistor, 70A I(D), 300V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:70A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:517W; No. of Pins:3Pins RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon