Infineon IRFP4310ZPBF

Name: Infineon IRFP4310ZPBF
Brand: Infineon
SKU: IRFP4310ZPBF

Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC

$ 1.072

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFP4310ZPBF	447	1		3.063	3.063	3.063	1.417	1.417
RS (Formerly Allied Electronics)		IRFP4310ZPBF	0	2	Bulk		1.100	1.050	1.050	1.050	12h
Avnet		IRFP4310ZPBF	0	800					1.006	0.946	5d
Future Electronics	2	IRFP4310ZPBF	0	20	Tube			1.230	1.200	1.160
Farnell		IRFP4310ZPBF	0	1		2.888*	2.216*	1.397*	1.101*	1.101*	21h

Inventory History

3 month trend: -62.15%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4310ZPBF.

Farnell

Datasheet9 pages18 years ago

IHS

iiiC

Inventory History

3 month trend:

-62.15%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-07

Lifecycle StatusProduction (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRFP4310ZPBF provided by its distributors.

Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC

Future Electronics

MOSFET, N Ch., 100V, 127A, 6 MOHM, 120 NC QG, TO-247AC, Pb-Free

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 100 V, 120 A, 0.0048 ohm, TO-247AC, Through Hole

Avnet

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:134A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:560A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon