Infineon IRFP4227PBF

Name: Infineon IRFP4227PBF
Brand: Infineon
SKU: IRFP4227PBF

MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W

$ 1.67

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Distributor		SKU		Min	Pkg
Future Electronics	2	IRFP4227PBF	2	10	Tube		1.770	1.750	1.700	1.650
Rutronik		TMOSP12221	25	25				1.970	1.670	1.670	23h
Rochester Electronics		IRFP4227PBF	1,156					1.610	1.440	1.350	16h
Avnet	2	88K4610	0	1		2.290	2.290	2.290	2.290	2.290	5d
RS (Formerly Allied Electronics)		IRFP4227PBF	0	1	Bulk	2.430	2.140	2.140	2.140	2.140	7h

Inventory History

3 month trend: -15.81%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP4227PBF.

Newark

Datasheet9 pages18 years ago

Datasheet8 pages18 years ago

iiiC

Inventory History

3 month trend:

-15.81%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-02-06

Lifecycle StatusProduction (Last Updated: 3 months ago)

LTB Date2026-05-31

LTD Date2026-11-30

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Descriptions

Descriptions of Infineon IRFP4227PBF provided by its distributors.

MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W

Distrelec

Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

N Channel Mosfet, 200V, 65A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:30V; Msl:- Rohs Compliant: Yes |Infineon IRFP4227PBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

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