Infineon IRFL024ZPBF

Name: Infineon IRFL024ZPBF
Brand: Infineon
SKU: IRFL024ZPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 46.2 Milliohms; Id 5.1A; SOT-223; Pd 1W; Vf 1.3V

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFL024ZPBF	0	1520	Bulk					0.310	12h
Farnell	IRFL024ZPBF	0	5			0.724*	0.414*	0.362*	0.315*	15h
Win Source	WS-IRFL024ZPBF	23,675	135					0.281	0.252	21h
Worldway Electronics	IRFL024ZPBF	16,331	7	Tube		0.094	0.091	0.086	0.086	20h
Voyager Components	IRFL024ZPBF-IR-1005	704			0.778	0.778	0.588	0.328	0.328	3h

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFL024ZPBF.

IHS

Datasheet10 pages15 years ago

Datasheet11 pages15 years ago

TME

iiiC

RS (Formerly Allied Electronics)

Jameco

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-11-26

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRFL024ZPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 46.2 Milliohms;ID 5.1A;SOT-223;PD 1W;VF 1.3V

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223

Jameco

55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 5.1A 4-Pin(3+Tab) SOT-223

Avnet

MOSFET N-CH 55V 5.1A SOT223 / Advanced Process Technology

Win Source

Small Signal Field-Effect Transistor, 5.1A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:5.1A; On Resistance, Rds(on):57.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:55V; On Resistance Rds(on):58mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:45°C/W; On State resistance @ Vgs = 10V:57.5ohm; Package / Case:SOT-223; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:41A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC