Infineon IRFL024NTRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.075 Ohm; Id 2.8A; SOT-223; Pd 1W; Vgs +/-20V
$ 0.315
Obsolete

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFL024NTRPBF.

Newark

Datasheet9 pages22 years ago

Farnell

IHS

_legacy Avnet

RS (Formerly Allied Electronics)

Inventory History

3 month trend:
-99.59%

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Alternate Parts

Price @ 1000
$ 0.315
$ 0.59
$ 0.59
Stock
1,669,854
388,087
388,087
Authorized Distributors
4
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223
SOT-223
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
2.8 mA
2.8 mA
2.8 mA
Threshold Voltage
4 V
-
-
Rds On Max
75 mΩ
75 mΩ
75 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
1 W
1 W
1 W
Input Capacitance
400 pF
400 pF
400 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-05-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30

Related Parts

InfineonIRFL024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
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Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V
Power MOSFET, N-Channel, QFET®, 60 V, 2.8 A, 140 mΩ, SOT-223
IRFL014TRPBF N-CHANNEL MOSFET TRANSISTOR, 2.7 A, 60 V, 3 + TAB-PIN SOT-223
MOSFET, POWER, N-CH, VDSS 60V, RDS(ON) 0.2OHM, ID 2.7A, SOT-223,PD 3.1W, VGS +/-20V

Descriptions

Descriptions of Infineon IRFL024NTRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
Single N-Channel 55 V 0.075 Ohm 18.3 nC HEXFET® Power Mosfet - SOT-223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R
Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:2.8A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.8 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 17.7 / Rise Time ns = 13.4 / Turn-OFF Delay Time ns = 22.2 / Turn-ON Delay Time ns = 8.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFL024NTRPBF.
  • SP001575806