Infineon IRFI540NPBF
$ 0.769
Production
Price and Stock
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Min
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Bulk Pricing
Inventory History
3 month trend: +37.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusProduction (Last Updated: 7 months ago)
Related Parts
InfineonIRLI540NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 23A;TO-220 Full-Pak;PD 54W
InfineonIRFI1310NPBF
Single N-Channel 100 V 0.036 Ohm 120 nC HEXFET® Power Mosfet - TO-220-3FP
Descriptions
Descriptions of Infineon IRFI540NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 20 A, 0.052 ohm, TO-220FP, Through Hole
Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220FP
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W
N Channel Mosfet, 100V, 20A, To-220Fp; T |Infineon Technologies IRFI540NPBF.
HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 100V, 18A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:18A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:110A; No. of Pins:3; Power Dissipation:42W; Power, Pd:42W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.8°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +37.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance52 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Isolation Voltage2500 Vrms
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance52 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation42 W
Rds On Max52 mΩ
Recovery Time250 ns
Rise Time39 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time44 ns
Turn-On Delay Time8.2 ns
Voltage Rating (DC)100 V
Dimensions
Height19.8 mm
Length10.6172 mm
Width4.826 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements