Infineon IRFBA90N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHS
$ 12.29
Obsolete
Price and Stock
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SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-09-06
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2012-12-28
LTD Date2013-06-28
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Descriptions
Descriptions of Infineon IRFBA90N20DPBF provided by its distributors.
200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHS
Infineon SCT
Trans Mosfet N-Ch 200V 98A 3-Pin(3+Tab) To-273Aa Rohs Compliant: Yes
Single N-Channel 200 V 0.023 Ohm 160 nC HEXFET® Power Mosfet - SBM-2
IRFBA90N20DPBF,MOSFET, 200V, 9 8A, 23 MOHM, 160 NC QG, TO-27
HEXFET POWER MOSFET Power Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)95 A
Current Rating98 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6.08 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation650 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance23 mΩ
Package Quantity50
PackagingBulk
Power Dissipation650 W
Rds On Max23 mΩ
Resistance23 Ω
Rise Time160 ns
Threshold Voltage5 V
Turn-Off Delay Time39 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)200 V
Dimensions
Height20.5 mm
Length10.9982 mm
Width5 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements