Infineon IRFB4127PBF

Name: Infineon IRFB4127PBF
Brand: Infineon
SKU: IRFB4127PBF

Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3

$ 1.38

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Distributor		SKU		Min	Pkg
Avnet	2	IRFB4127PBF	137	50				0.980	0.938	0.938	6d
Newark	2	IRFB4127PBF.	130	50				1.640	1.490	1.490
Future Electronics	3	IRFB4127PBF	14,100	50	Tube			1.380	1.340	1.300
Arrow Electronics	2	IRFB4127PBF	1,304	1		3.092	2.001	1.601	1.488	1.488
Rutronik		TMOSP12117	2,100	50				1.210	0.965	0.965	1h

Inventory History

3 month trend: +27.06%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB4127PBF.

IHS

Datasheet8 pages17 years ago

Datasheet9 pages17 years ago

Inventory History

3 month trend:

+27.06%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-07-23

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRFB4127PBF provided by its distributors.

Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF

Jak Electronics

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 200V 76A 3-Pin (3+Tab) TO-220AB Tube

Verical

MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 375 W

Distrelec

MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free

RS (Formerly Allied Electronics)

N Channel Mosfet, 200V, 76A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:76A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFB4127PBF.

Newark

MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:200V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon