Infineon IRFB812PBF

Name: Infineon IRFB812PBF
Brand: Infineon
SKU: IRFB812PBF

MOSFET N CH 500V 3.6A TO220AB / Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube

$ 0.856

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Rochester Electronics	IRFB812PBF	13,400					0.508	0.422	0.376	3h
RS (Formerly Allied Electronics)	IRFB812PBF	0	5	Bulk		1.440	1.290	1.290	1.290	20h
Farnell	IRFB812PBF	0	1		0.748*	0.748*	0.662*	0.573*	0.573*	1d
Verical	IRFB812PBF	12,600	656					0.527	0.470
Component Stockers USA	IRFB812PBF	17,512			0.420	0.420	0.400	0.360	0.360	18h

Inventory History

3 month trend: -17.65%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB812PBF.

IHS

Datasheet8 pages14 years ago

Datasheet9 pages14 years ago

Inventory History

3 month trend:

-17.65%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-06-24

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

VishayIRF830PBF

Single N-Channel 500 V 1.5 Ohms Flange Mount Power Mosfet - TO-220-3

Details

VishayIRFBC30PBF

Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB

Details

VishayIRF720PBF

Single N-Channel 400 V 1.8 Ohms Flange Mount Power Mosfet - TO-220-3

Details

onsemiFQP5N60C

Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220

Details

onsemiFQP3P50

Power MOSFET, P-Channel, QFET®, -500 V, -2.7 A, 4.9 Ω, TO-220

Details

onsemiFQP5N50C

TRANS MOSFET N-CH 500V 5A 3PIN TO-220

Details

Descriptions

Descriptions of Infineon IRFB812PBF provided by its distributors.

MOSFET N CH 500V 3.6A TO220AB / Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube

Win Source

Single N-Channel 500 V 2.2 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N CH, 500V, 3.6A,TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.75ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3

element14 APAC