onsemi FQP3P50

Name: onsemi FQP3P50
Brand: onsemi
SKU: FQP3P50

Power Mosfet, P-channel, Qfet®, -500 V, -2.7 A, 4.9 Ω, TO-220

$ 1.156

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Distributor	SKU		Min	Pkg
DigiKey	FQP3P50-ND	3,542	1	Tube	2.400	2.400	1.052	0.831	0.831
RS (Formerly Allied Electronics)	FQP3P50	0	5	Bulk		1.650	1.480	1.480	1.480	22h
Avnet	FQP3P50	0	1K							11h
Microchip USA	FQP3P50	191	150	Tube				15.000	15.000	1d
Component Stockers USA	FQP3P50	34,175			0.620	0.610	0.590	0.570	0.570	>1wk

Inventory History

3 month trend: +8.97%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

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Upverter

Technical Drawing1 page6 years ago

IHS

TME

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

+8.97%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

LTB Date2023-09-30

LTD Date2024-03-30

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQP3P50 provided by its distributors.

Power MOSFET, P-Channel, QFET®, -500 V, -2.7 A, 4.9 Ω, TO-220

onsemi

TRANSISTOR, P-CHANNEL, QFET MOSFET, -500V, -2.7A, 4.9 OHM, -55 TO 150C, TO-220

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 2.7A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):4.9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-5V; Power Dissipation Pd:85W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-2.7A; On State Resistance Max:4.9ohm; Package / Case:TO-220; Power Dissipation Pd:85W; Power Dissipation Pd:85W; Pulse Current Idm:10.8A; Termination Type:Through Hole; Voltage Vds Typ:-500V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-5V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor