Infineon IRFB3206GPBF

Name: Infineon IRFB3206GPBF
Brand: Infineon
SKU: IRFB3206GPBF

60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package

$ 1.52

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRFB3206GPBF	2,229			1.240	1.110	1.040	16h
RS (Formerly Allied Electronics)		IRFB3206GPBF	0	450	Bulk		4.420	3.980	7h
Avnet		IRFB3206GPBF	0	1K					5d
Verical	3	IRFB3206GPBF	518	242			1.388	1.300
Win Source		WS-IRFB3206GPBF	94,610	65		0.825	0.643	0.643	16h

Inventory History

3 month trend: -31.05%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB3206GPBF.

IHS

Datasheet9 pages17 years ago

Datasheet8 pages17 years ago

iiiC

Inventory History

3 month trend:

-31.05%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFB3206GPBF

InfineonIRFB3206PBF

Price @ 1000

$ 1.52

$ 1.04

Stock

265,213

1,172,087

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

4 V

Rds On Max

3 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

6.54 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-01-06

Lifecycle StatusEOL (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFB3206GPBF provided by its distributors.

60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package

International Rectifier

Single N-Channel 60 V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

MOSFET, 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, HALOGEN-FREE

RS (Formerly Allied Electronics)

Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

Infineon

Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:210A; On Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:4V; Package/Case:3-TO-220 ;RoHS Compliant: Yes

Newark