Infineon IRF9Z34NPBF

Name: Infineon IRF9Z34NPBF
Brand: Infineon
SKU: IRF9Z34NPBF

Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.1 Ohm; Id -19A; TO-220AB; Pd 68W; Vgs +/-20V

$ 0.337

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet		IRF9Z34NPBF	2,974	1		0.521	0.513	0.287	0.287	0.287	18h
Newark	2	IRF9Z34NPBF	8,469	1		1.480	0.672	0.602	0.487	0.480
Future Electronics	2	IRF9Z34NPBF	158,250	100	Tube			0.345	0.335	0.325
Arrow Electronics	3	IRF9Z34NPBF	16,562	1		0.513	0.513	0.453	0.351	0.321
Rutronik		TMOSP12092	2,200	50				0.360	0.288	0.288	23h

Inventory History

3 month trend: -3.90%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF9Z34NPBF.

Newark

Datasheet9 pages22 years ago

Datasheet10 pages22 years ago

Datasheet8 pages28 years ago

IHS

RS (Formerly Allied Electronics)

Jameco

iiiC

Inventory History

3 month trend:

-3.90%

CAD Models

Download Infineon IRF9Z34NPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint	3D	Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

InfineonIRF9Z34NPBF

InfineonAUIRF9Z34N

Price @ 1000

$ 0.337

$ 0.791

Stock

1,379,381

156,869

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

-55 V

Continuous Drain Current (ID)

19 A

Threshold Voltage

-4 V

-2 V

Rds On Max

100 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

56 W

68 W

Input Capacitance

620 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-06-16

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

onsemiHUFA75309P3

PWR MOS ULTRAFET 55V/19A/0.070HMS N-CHANNEL TO-220AB

Details

onsemiHUF75309P3

PWR MOS ULTRAFET 55V/19A/0.070HMS N-CHANNEL TO-220AB

Details

InfineonIRFZ24NPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V

Details

onsemiHUFA75307P3

MOSFET N-CH 55V 15A TO-220AB

Details

onsemiFQP20N06L

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 21 A, 55 mΩ, TO-220

Details

onsemiNTP18N06LG

Tube Through Hole N-Channel Single Mosfet Transistor 15A Tc 15A 48.4W 42ns

Details

Descriptions

Descriptions of Infineon IRF9Z34NPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;TO-220AB;PD 68W;VGS +/-20V

RS (Formerly Allied Electronics)

Transistor P-MOSFET ; -55 V; -17 A; 100mOhm ; 56 W; -55+175 deg.C; THT; TO-220-3

Maritex

Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -19 A, TO-220, IRF9Z34NPBF

Burklin Elektronik

Single P-Channel 55 V 0.1 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

Avnet

68W 20V 4V@ 250uA 35nC(Max) @ 10V 55V 100m¦¸@ 10V 19A 620pF@ 25V TO-220 8.77mm

UnikeyIC

Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

P Channel Mosfet, -55V, 19A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF9Z34NPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, P, -55V, -17A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

element14 APAC