Infineon IRF9240

Name: Infineon IRF9240
Brand: Infineon
SKU: IRF9240

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

$ 10.81

Production

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF9240	9,846					4.850	4.340	4.090	13h
Future Electronics	IRF9240	0	2	Bulk		17.870	17.280	17.280	17.280
Arrow Electronics	IRF9240	0	100				18.010	18.010	18.010
Farnell	IRF9240	0	1		33.678*	33.678*	16.241*	13.205*	13.205*	12h
Win Source	WS-IRF9240	20	7			9.585	6.390	6.390	6.390	13h

Inventory History

3 month trend: -0.49%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF9240.

IHS

Datasheet7 pages25 years ago

Datasheet7 pages6 years ago

Newark

Inventory History

3 month trend:

-0.49%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1990-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF9240 provided by its distributors.

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Infineon

HEXFET POWER MOSFET / P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-204AA (TO-3)

Win Source

-200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2

Infineon SCT

Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-11A; On Resistance, Rds(on):0.5ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No

Newark

MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:200V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (18-Jun-2012); Avalanche Single Pulse Energy Eas:500mJ; Current Iar:11A; Current Id Max:-11A; Current Temperature:25°C; Device Marking:IRF9240; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Pulse Current Idm:44A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V; Weight:0.01kg

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