Infineon IRF250
$ 28.04
Production
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CAD Models
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 8 months ago)
Descriptions
Descriptions of Infineon IRF250 provided by its distributors.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Device Marking:IRF250; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance100 mΩ
Power Dissipation150 W
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time170 ns
Turn-On Delay Time35 ns
Dimensions
Height7.74 mm
Lead Pitch11 mm
Compliance
Environmental Classification
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCUnaffected
RoHSNon-Compliant
Compliance Statements