Infineon IRF7832PBF

Name: Infineon IRF7832PBF
Brand: Infineon
SKU: IRF7832PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 3.1MILLIOHMS; Id 20A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7832PBF	0	3800	Bulk					0.940	5h
Farnell	IRF7832PBF	0	5			1.195*	0.821*	0.507*	0.497*	15h
Win Source	WS-IRF7832PBF	28,090	120					0.317	0.285	16h
Worldway Electronics	IRF7832PBF	10,873	7	Tube		0.108	0.105	0.099	0.099	15h
ICPartonline	IRF7832PBF	36,561			0.630	0.599	0.567	0.536	0.504	>1wk

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7832PBF.

Newark

Datasheet10 pages20 years ago

IHS

TME

RS (Formerly Allied Electronics)

Jameco

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Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7832PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.32V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:160A; Row Pitch:6.3mm; SMD Marking:IRF7832PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.32V; Voltage Vgs Rds on Measurement:10V

element14 APAC