Infineon IRF8010STRLPBF

Name: Infineon IRF8010STRLPBF
Brand: Infineon
SKU: IRF8010STRLPBF

Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

$ 1.16

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Distributor		SKU		Min	Pkg
Avnet		IRF8010STRLPBF	21,600	800					0.914	0.882	2d
Newark		IRF8010STRLPBF.	21,600	800	Tape & Reel				0.953	0.953
Future Electronics	2	IRF8010STRLPBF	800	800	Tape & Reel				1.090	1.060
Arrow Electronics	3	IRF8010STRLPBF	470	1		3.018	2.116	1.342	1.342	1.342
Rutronik		TMOSP12022	800	800					1.160	0.928	15h

Inventory History

3 month trend: -11.70%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8010STRLPBF.

Newark

Datasheet11 pages21 years ago

IHS

element14 APAC

Jameco

Inventory History

3 month trend:

-11.70%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-21

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

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Descriptions

Descriptions of Infineon IRF8010STRLPBF provided by its distributors.

Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 80A D2PAK

Win Source

100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

Infineon SCT

MOSFET, 100V, 80A, 15 MOHM, 81 NC QG, D2-PAK | Infineon IRF8010STRLPBF

RS (Formerly Allied Electronics)

SMPS MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:260W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF8010STRLPBF.

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 15 / Gate-Source Voltage V = 20 / Fall Time ns = 120 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 61 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 260

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