Infineon IRF2807STRLPBF

Name: Infineon IRF2807STRLPBF
Brand: Infineon
SKU: IRF2807STRLPBF

Single N-Channel 75V 13 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

$ 0.991

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark		IRF2807STRLPBF	589	1	Cut Tape	2.850	1.920	1.390	1.100	1.100
Arrow Electronics		IRF2807STRLPBF	7	1		2.675	2.675	2.675	2.675	2.675
Rochester Electronics	2	IRF2807STRLPBF	2,300					1.030	0.855	0.762	1d
DigiKey	3	IRF2807STRLPBFCT-ND	6,936	1	Cut Tape	2.800	1.808	1.239	1.239	1.239
RS (Formerly Allied Electronics)		IRF2807STRLPBF	0	800	Bulk				1.590	1.590	13h

Inventory History

3 month trend: -54.78%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF2807STRLPBF.

Newark

Datasheet11 pages21 years ago

Datasheet11 pages24 years ago

Datasheet10 pages24 years ago

IHS

Jameco

iiiC

DigiKey

Inventory History

3 month trend:

-54.78%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-27

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRF2807STRLPBF provided by its distributors.

Single N-Channel 75V 13 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET, N Channel, 75 V, 82 A, 0.013 ohm, TO-263 (D2PAK), Surface Mount

Avnet

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 75V 82A 3-Pin(2+Tab) D2PAK T/R

Verical

IRF2807STRLPBF,MOSFET, 75V, 82 A, 13 MOHM, 106.7 NC QG, D2-P

Jameco

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:82A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:200W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF2807STRLPBF.

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230

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