Infineon IRF8010SPBF

Name: Infineon IRF8010SPBF
Brand: Infineon
SKU: IRF8010SPBF

Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

$ 2.68

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF8010SPBF	0	450	Bulk				2.680	1.790	12h
Farnell	IRF8010SPBF	0	1		5.395*	4.086*	3.385*	2.832*	2.832*	10h
Win Source	WS-IRF8010SPBF	13,830	23				1.771	1.486	1.486	1d
Worldway Electronics	IRF8010SPBF	12,741	7	Tube		0.546	0.530	0.502	0.502	2d
Anlinkda	IRF8010SPBF	48,727			0.231	0.207	0.177	0.174	0.167	3d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8010SPBF.

IHS

Datasheet11 pages21 years ago

Datasheet12 pages21 years ago

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF8010SPBF provided by its distributors.

Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

Future Electronics

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;D2Pak;PD 260W;VGS +/-20

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK

Avnet

SMPS MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 100V, 80A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15mohm; Package / Case:D2-PAK; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC