STMicroelectronics STB60NF10T4
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB60NF10T4.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-02
LTD Date2021-04-02
Related Parts
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N-Channel 100V - 0.012Ohm - 80A - D2PAK LOW GATE CHARGE STripFET(TM) MOSFET
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
InfineonIRF3710STRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 23Milliohms;ID 57A;D2Pak;PD 200W;VGS +/-20
Descriptions
Descriptions of STMicroelectronics STB60NF10T4 provided by its distributors.
STB60NF10T4 N-channel MOSFET Transistor, 80 A, 100 V, 3-Pin D2PAK
N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
N-Channel 100 V 0.023 O Surface Mount STripFET II Power MosFet - D2PAK
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.27 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max23 mΩ
Resistance23 mΩ
Rise Time56 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time82 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB60NF10T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant