Infineon IRF7855PBF

Name: Infineon IRF7855PBF
Brand: Infineon
SKU: IRF7855PBF

IRF7855PBF N-channel MOSFET Transistor, 12 A, 60 V, 8-Pin SOIC

$ 0.52

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF7855PBF	11					0.627	0.520	0.464	17h
RS (Formerly Allied Electronics)	IRF7855PBF	0	3800	Bulk					1.560	8h
Farnell	IRF7855PBF	0	1		1.753*	1.378*	1.050*	0.759*	0.744*	12h
Win Source	WS-IRF7855PBF	10,270	80				0.650	0.504	0.504	18h
Worldway Electronics	IRF7855PBF	6,305	7	Tube		0.170	0.165	0.156	0.156	17h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7855PBF.

element14 APAC

Datasheet8 pages20 years ago

IHS

iiiC

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7855PBF

InfineonIRF7855TRPBF

Price @ 1000

$ 0.52

$ 0.648

Stock

77,311

690,184

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

12 A

Threshold Voltage

4.9 V

Rds On Max

9.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

1.56 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-01-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7855PBF provided by its distributors.

IRF7855PBF N-channel MOSFET Transistor,12 A, 60 V, 8-Pin SOIC

RS (Formerly Allied Electronics)

Single N-Channel 60 V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

MOSFET N-CH 60V 12A 8-SOIC / Trans MOSFET N-CH 60V 12A 8-Pin SOIC N Tube

Win Source

60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS

Infineon SCT

Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N, 60V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:97mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7855; Current Id Max:12A; Output Current Max:2.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:97mW; Pulse Current Idm:97A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC