Infineon IRF7807APBF

Name: Infineon IRF7807APBF
Brand: Infineon
SKU: IRF7807APBF

IRF7807APBF N-channel MOSFET Transistor, 8.3 A, 30 V, 8-Pin SOIC

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7807APBF	0	3800	Bulk					1.284	6h
Farnell	IRF7807APBF	0	1		1.099*	1.099*	0.739*	0.492*	0.492*	1d
Win Source	WS-IRF7807APBF	3,660	95				0.626	0.417	0.417	15h
Worldway Electronics	IRF7807APBF	17,471	7	Tube		0.145	0.140	0.133	0.133	13h
SHENGYU ELECTRONICS	IRF7807APBF	12,409	1		0.251	0.246	0.240	0.230	0.220	3d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7807APBF.

IHS

Datasheet9 pages21 years ago

Datasheet8 pages21 years ago

Farnell

TME

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-10-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Descriptions

Descriptions of Infineon IRF7807APBF provided by its distributors.

IRF7807APBF N-channel MOSFET Transistor, 8.3 A, 30 V, 8-Pin SOIC

RS (Formerly Allied Electronics)

Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses

Infineon

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Row Pitch:6.3mm; SMD Marking:F7807A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC