Infineon IRF7476PBF

Name: Infineon IRF7476PBF
Brand: Infineon
SKU: IRF7476PBF

Trans MOSFET N-CH 12V 15A 8-Pin SOIC

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7476PBF	0	3800	Bulk					1.431	23h
Farnell	2	IRF7476PBF	0	1	Cut Tape	1.463*	1.463*	0.757*	0.515*	0.515*	9h
Worldway Electronics		IRF7476PBF	14,381	7	Tape & Reel		0.436	0.423	0.401	0.401	9h
Antdic Electronics		IRF7476PBF	38,465			33.000	31.350	29.700	26.400	24.750	2d
Run Hong Electronics		IRF7476PBF	9,630			22.721	22.721	22.721	22.721	22.721	21h

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7476PBF.

IHS

Datasheet9 pages20 years ago

Datasheet8 pages20 years ago

TME

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-04-28

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7476PBF provided by its distributors.

Trans MOSFET N-CH 12V 15A 8-Pin SOIC

Verical

Small Signal Field-Effect Transistor, 15A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, 12V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:12V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:15A; Cont Current Id @ 70°C:12; Current Id Max:15A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:120A; Rth:50; Termination Type:SMD; Voltage Vds:12V; Voltage Vds Typ:12V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:4.5V

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