Infineon IRF7470TRPBF

Name: Infineon IRF7470TRPBF
Brand: Infineon
SKU: IRF7470TRPBF

Mosfet, Power; N-ch; Vdss 40V; Rds(on) 9 Milliohms; Id 10A; SO-8; Pd 2.5W; Vgs +/-12V

$ 0.42

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRF7470TRPBF	1	1	Cut Tape	0.174	0.174	0.174	0.174	0.174
Rochester Electronics		IRF7470TRPBF	0					0.802	0.665	0.593	7h
RS (Formerly Allied Electronics)		IRF7470TRPBF	0	4K	Bulk					0.630	21h
Farnell	3	IRF7470TRPBF	0	5	Cut Tape		1.722*	1.205*	0.962*	0.962*	7h
Component Stockers USA		IRF7470TRPBF	100,533			0.660	0.660	0.620	0.530	0.500	>1wk

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7470TRPBF.

IHS

Datasheet8 pages21 years ago

Farnell

RS (Formerly Allied Electronics)

Jameco

iiiC

Inventory History

3 month trend:

-100%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-04-18

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2024-07-31

LTD Date2025-01-31

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Descriptions

Descriptions of Infineon IRF7470TRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 9 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-12V

RS (Formerly Allied Electronics)

Single N-Channel 40V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

N CHANNEL MOSFET, 40V, 10A, SOIC; TRANSI; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;

element14 APAC

Trans MOSFET N-CH 40V 10A 8-Pin SOIC T/R / MOSFET N-CH 40V 10A 8-SOIC

Win Source

Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SO ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 12 / Fall Time ns = 3.2 / Rise Time ns = 1.9 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

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