Infineon IRF7105TRPBF

Infineon N/P-Channel MOSFET HEXFET Series, Vds=25V, 2.3A, 3.5A, SOIC Package, SMD, 8-Pin

Trans MOSFET N/P-CH 25V 3.5A/2.3A 8-Pin SOIC T/R / MOSFET N/P-CH 25V 8-SOIC

MOSFET N/P-CH 25V 3.5A/2.3A 8SO "Mosfet Array 25V 3.5A, 2.3A 2W Surface Mount 8-SO"

Dual N/P-Channel 25 V 0.1/0.25 Ohm 9.4/10 nC HEXFET® Power Mosfet -SOIC-8

Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm

25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, N & P CH, 25V, 3.5A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg

Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 3.5 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 20 / Fall Time ns = 37 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2